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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BQ3285ES is a low-power CMOS real-time clock (RTC) IC designed for direct clock/calendar replacement in IBM AT-compatible computers and other applications. It integrates 242 bytes of nonvolatile SRAM (NVSRAM) for general storage, along with 14 bytes dedicated to clock/calendar and control functions. The device supports both BCD and binary time formats, 12/24-hour modes, and includes automatic leap-year adjustment and optional daylight saving adjustment. Key features include an alarm interrupt output that remains active in battery-backup mode, a programmable square wave output (32.768 kHz), and three individually maskable interrupt event flags for periodic rates, time-of-day alarm, and end-of-clock update cycle. The RTC operates from a supply voltage of 2.5V to 4V (note: manufacturer page specifies 4.5-5.5V for BQ3285E variant) and draws a typical supply current of 300 µA at 5V. Under battery backup, the current consumption is less than 0.5 µA. The device is available in a 24-SOIC (0.295", 7.50mm Width) surface-mount package, with an operating temperature range of 0°C to 70°C. It is functionally compatible with the DS1285 and closely matches the MC146818A pin configuration. The BQ3285ES is suitable for timekeeping and alarm applications in computing, industrial, and consumer systems requiring battery-backed real-time clock functionality.
| Qty | Low | High |
|---|---|---|
| 1+ | $7.82 | $7.82 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The supply voltage range is specified as 2.5V to 4V from the database, but the manufacturer page for the BQ3285E variant indicates 4.5V to 5.5V. Verify the correct voltage for your application.
The BQ3285ES is available in a 24-SOIC (0.295", 7.50mm Width) surface-mount package.
The operating temperature range is 0°C to 70°C.
The RoHS status is listed as RoHS3 Compliant, but this is unverified.
It includes 242 bytes of nonvolatile SRAM (NVSRAM) for general storage.
It uses a parallel interface.
Under battery operation, the current consumption is less than 0.5 µA.