BQ2201SN-N

The Texas Instruments BQ2201SN-N is a CMOS SRAM Nonvolatile Controller Unit that provides essential functions for transforming a standard CMOS SRAM into nonvolatile read/write memory. It features a precision comparator to monitor the 5V VCC input for out-of-tolerance conditions, forcing a conditioned chip-enable output to inactive to write-protect any standard CMOS SRAM when detected.

During power failures, the external SRAM is switched from the VCC supply to one of two 3V backup supplies. Upon subsequent power-up, the SRAM remains write-protected until a power-valid condition is established. This controller is footprint- and timing-compatible with industry standards, offering a chip-enable propagation delay of less than 10ns.

Key electrical specifications include a typical operating current of 3000 µA and a maximum input voltage of 5.5V. The operating temperature range is -40°C to 85°C. The device is housed in an 8-SOIC package, suitable for surface mount applications.

This component is ideal for applications requiring reliable data retention during power interruptions, such as memory backup systems and portable devices. Its write-protection control and efficient power switching make it a robust solution for maintaining data integrity.