BQ2201SN

The Texas Instruments BQ2201SN is a CMOS SRAM Nonvolatile Controller Unit that converts standard CMOS SRAM into nonvolatile read/write memory. It features power monitoring and switching for 3-volt battery-backup applications, ensuring data integrity during power failures.

Key electrical specifications include a supply voltage range of 4.5V to 5.5V and an operating temperature range of 0°C to 70°C. The device boasts a chip-enable propagation delay of less than 10ns, crucial for high-speed memory operations. It supports 5% or 10% supply operation and utilizes 3-volt primary cell inputs for backup power.

The controller includes a precision comparator to monitor the 5V VCC input. When an out-of-tolerance condition is detected, a conditioned chip-enable output is forced inactive, write-protecting any standard CMOS SRAM. During power failure, the external SRAM is switched from the VCC supply to one of two 3V backup supplies. Upon power-up, the SRAM remains write-protected until a power-valid condition exists.

The BQ2201SN is supplied in an 8-SOIC package suitable for surface mounting. The device is footprint and timing compatible with industry standards, offering enhanced reliability for nonvolatile memory conversion.