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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BPX87 from OSRAM Opto Semiconductors, Inc. is a phototransistor designed for optical sensing applications. It features a peak wavelength sensitivity of 850nm, making it suitable for various infrared detection tasks.
Key electrical specifications include a maximum collector current (Ic) of 50mA and a collector-emitter breakdown voltage (Vceo) of 35V. The dark current (Id) is rated at a maximum of 1nA. The component has a maximum power dissipation of 90mW and a viewing angle of 36°.
Packaged in a 6-SDIP format with dimensions of (0.071", 1.80mm), the BPX87 is supplied in bulk packaging. Its Moisture Sensitivity Level (MSL) is 1 (Unlimited), indicating ease of handling during assembly processes.
This phototransistor is compliant with RoHS3 standards and REACH regulations. It is intended for use in applications requiring precise light detection within the infrared spectrum.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BPX87 phototransistor has a peak wavelength sensitivity of 850nm.
The maximum collector current (Ic) for the BPX87 is 50mA.
The collector-emitter breakdown voltage (Vceo) for the BPX87 is 35V.
The BPX87 is supplied in a 6-SDIP package.
The Moisture Sensitivity Level (MSL) for the BPX87 is 1 (Unlimited).