| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,020 pcs
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3020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay BPW85A is a silicon NPN phototransistor designed for use in electronic control and drive circuits. It features high radiant sensitivity and is suitable for detecting visible and near infrared radiation. The component is housed in a clear T-1 plastic package with a diameter of 3 mm.
Key electrical characteristics include a collector emitter voltage of up to 70V and a collector current of up to 50mA. The phototransistor exhibits a fast response time and an angle of half sensitivity of ±25°. Its peak sensitivity wavelength is 850 nm, with a spectral band ranging from 450 to 1080 nm. The operating temperature range is from -40°C to +100°C.
This phototransistor is designed for through-hole mounting. The absolute maximum ratings specify a power dissipation of 100mW at ambient temperatures up to 55°C and a junction temperature of 100°C. The storage temperature range is also -40°C to +100°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating temperature range for the BPW85A is -40°C to 100°C.
The peak sensitivity wavelength of the BPW85A is 850 nm.
The angle of half sensitivity for the BPW85A is ±25 degrees.
The collector emitter voltage rating for the BPW85A is 70V.
The maximum power dissipation of the BPW85A at 55°C is 100mW.
The BPW85A phototransistor comes in a T-1 plastic package.