| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
33,983 pcs
|
33983 pcs | On Request | 1 | On Request | On Request | 1927+ | On Request | On Request |
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| SVHC Present |
The Vishay Semiconductors BPW77NB is a silicon NPN phototransistor sensitive to visible and near-infrared radiation. It features high radiant sensitivity and fast response times, making it suitable for detector applications in electronic control and drive circuits.
This phototransistor is housed in a hermetically sealed TO-18 package with a glass lens and a connected base terminal. The package dimensions are Ø 4.7 mm. It operates within a temperature range of -40 to +125 °C and has a total power dissipation of 250 mW at 25 °C ambient temperature.
Key electrical characteristics include a collector emitter breakdown voltage of 70 V, a collector current of up to 50 mA, and a spectral bandwidth ranging from 450 to 1080 nm, with a peak sensitivity at 850 nm. The angle of half sensitivity is ±10°.
The BPW77NB is a lead-free component compliant with RoHS 2002/95/EC and WEEE 2002/96/EC directives. It is supplied in bulk packaging with a minimum order quantity of 1000 pieces.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector emitter breakdown voltage for the BPW77NB is 70 V at 1 mA.
The spectral bandwidth of the BPW77NB ranges from 450 to 1080 nm.
The angle of half sensitivity for the BPW77NB is ±10 degrees.
The operating temperature range for the BPW77NB is -40 to +125 °C.
The BPW77NB is supplied in a TO-18 package.
Yes, the BPW77NB is a lead-free component in accordance with RoHS 2002/95/EC.