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BPV11F The Vishay Dale BPV11F is a highly sensitive silicon NPN phototransistor in a standard T-1 plastic package. It is spectrally matched to GaAs IR emitters.
Mfr Part #:

BPV11F

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale BPV11F is a highly sensitive silicon NPN phototransistor in a standard T-1 plastic package. It is spectrally matched to GaAs IR emitters.
✓ Total Stock: 1,100 pcs
$ Price Range: $165.89

BPV11F Available from 3 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BPV11F Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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BPV11F Description

Short technical summary and product information.

The Vishay Dale BPV11F is a silicon NPN epitaxial planar phototransistor designed for high sensitivity applications. It features a standard T-1 (5 mm) plastic package with an integrated IR filter, making it spectrally matched to GaAs IR emitters operating around 950 nm. The phototransistor has a viewing angle of ±15 degrees, which helps to minimize sensitivity to ambient stray light.

 

Key electrical characteristics include a collector-emitter breakdown voltage of 70V, a typical DC current gain (hFE) of 450 at 5V/5mA, and a typical collector light current of 9mA under specific test conditions (Ee=1 mW/cm², λ=950 nm, VCE=5 V). The device also offers a typical turn-on time of 6 µs and a turn-off time of 5 µs, with a cut-off frequency of 110 kHz.

 

A base terminal is available for biasing and sensitivity control. The BPV11F is suitable for detector applications in industrial electronic circuitry, measurement, and control systems. Its operating temperature range is from -55°C to 100°C, with a maximum total power dissipation of 150 mW at 25°C ambient temperature.

BPV11F Quick Information

Product Type: Phototransistor
Canonical Name: BPV11F Silicon NPN Phototransistor
Subcategory: NPN

BPV11F Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BPV11F Estimated Pricing

Qty Low High
1+ $165.89 $165.89

Estimated market price range - modelled values for guidance only, not live distributor offers.

BPV11F Features

  • Highly sensitive silicon NPN phototransistor.
  • Standard T-1 (5 mm) plastic package.
  • IR filter matched to 950 nm GaAs emitters.
  • Collector-emitter breakdown voltage of 70V.
  • Typical DC current gain of 450.

BPV11F Applications

  • Used as a detector in industrial control systems.
  • Suitable for measurement and sensing applications.
  • Ideal for remote control IR receiver modules.
  • Employed in optical sensing and light detection.
  • Applicable in ambient light insensitivity circuits.

BPV11F FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage for the BPV11F?

The collector-emitter breakdown voltage is 70V.

What is the typical DC current gain of the BPV11F?

The typical DC current gain is 450.

What is the peak wavelength sensitivity for the BPV11F?

The wavelength of peak sensitivity is 930 nm.

What is the package type for the BPV11F phototransistor?

The BPV11F is supplied in a standard T-1 plastic package.

What is the typical turn-on time for the BPV11F?

The typical turn-on time is 6 µs.

What is the typical turn-off time for the BPV11F?

The typical turn-off time is 5 µs.

What is the typical cut-off frequency of the BPV11F?

The typical cut-off frequency is 110 kHz.

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