| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,525 pcs
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4525 pcs | On Request | 1 | On Request | On Request | 0745+RoHS | On Request | On Request |
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The Osram BP104FS is a Silicon Pin Photodiode specifically designed for applications operating at a wavelength of 950 nm. It offers a short switching time of typically 20 ns, making it suitable for fast detection tasks.
This photodiode features a radiant sensitive area of 4.84 mm² and has a spectral range of sensitivity from 800 nm to 1100 nm. It operates within a temperature range of -40°C to 100°C and has a reverse voltage rating of 20 V.
The BP104FS is housed in a 2-SMD, Gull Wing package, designed for surface mounting. Its compact DIL/SMT package is suitable for vapor-phase and IR-reflow soldering processes, offering high packing density in electronic designs.
Key electrical characteristics include a photocurrent of at least 25 µA (at 5 V reverse voltage and 1 mW/cm² irradiance), a dark current of no more than 30 nA (at 10 V reverse voltage), and a forward voltage of 1.3 V (at 100 mA). The capacitance is 48 pF at 1 MHz and 0 V reverse voltage.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.50 | $1.50 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The wavelength of maximum sensitivity for the BP104FS photodiode is 950 nm.
The rise and fall time of the photocurrent for the BP104FS photodiode is 20 ns.
The operating and storage temperature range for the BP104FS photodiode is -40°C to 100°C.
The BP104FS photodiode is available in a 2-SMD, Gull Wing package suitable for surface mounting.
The maximum reverse voltage for the BP104FS photodiode is 20 V.
The dark current for the BP104FS photodiode is a maximum of 30 nA at a reverse voltage of 10 V.
The capacitance of the BP104FS photodiode is 48 pF when measured at 0 V reverse voltage and 1 MHz.