| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
350 pcs
|
350 pcs | On Request | 1 | On Request | On Request | 1641+ | On Request | On Request | |
|
248 pcs
|
248 pcs | On Request | 1 | On Request | On Request | 1641+ | On Request | On Request |
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The BM63767S-VA is a 3-phase inverter IGBT power module from ROHM Semiconductor. It integrates IGBT technology for high-efficiency power switching in a through-hole 25-PowerDIP package.
The module is rated for 30 A of current and provides 1500 Vrms of isolation voltage, making it suitable for power conversion circuits that require galvanic isolation. Its 3-phase inverter configuration supports three-phase motor drive and AC power stage designs.
The through-hole package with 1.134" (28.80 mm) lead spacing simplifies PCB assembly and offers good thermal and mechanical stability. The module is intended for use in power driver modules, inverters, and motor control applications where compact, reliable power switching is needed.
| Qty | Low | High |
|---|---|---|
| 60+ | $21.25 | $21.25 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BM63767S-VA comes in a 25-PowerDIP Module package measuring 1.134" (28.80 mm).
The BM63767S-VA is listed as RoHS3 Compliant.
The BM63767S-VA is rated for 30 A of current.
The BM63767S-VA provides 1500 Vrms isolation voltage.
The BM63767S-VA is configured as a 3-phase inverter.
The BM63767S-VA is an IGBT power module.
The BM63767S-VA uses through-hole mounting.
