| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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274 pcs
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274 pcs | On Request | 1 | On Request | On Request | 0025+ | On Request | On Request |
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The BLV862 from Philips is an NPN silicon planar epitaxial transistor designed for UHF applications. It features a push-pull configuration with internal input and output matching networks for optimal wideband performance and high gain.
This transistor is suitable for common emitter class-AB operation in output stages of television transmitter amplifiers, covering bands 4 and 5 (470 to 860 MHz) for vision or sound amplification. Key performance metrics at 860 MHz include a power output of 150W, a minimum power gain of 8dB (typical 9dB), and a minimum collector efficiency of 45% (typical 52%). The gain flatness is typically less than or equal to 1dB.
The device is encapsulated in a SOT262B 4-lead rectangular flange package. It utilizes polysilicon emitter ballasting resistors for an improved temperature profile and gold metallization for enhanced reliability. The operating junction temperature is rated up to 200°C, with a maximum total power dissipation of 350W at 25°C mounting base temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.24 | $0.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The power output (PL) is 150 W at 860 MHz in CW class-AB operation.
The minimum power gain (Gp) is 8 dB at 860 MHz in CW class-AB operation.
The minimum collector efficiency (ηC) is 45% at 860 MHz in CW class-AB operation.
The BLV862 is encapsulated in a SOT262B 4-lead rectangular flange package.
The RoHS status is RoHS3 Compliant and the REACH status is REACH Unaffected.