| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,480 pcs
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3480 pcs | On Request | 1 | On Request | On Request | 03+ | On Request | On Request | |
|
121 pcs
|
121 pcs | On Request | 1 | On Request | On Request | 03+ | On Request | On Request |
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| Transistor Type |
The BLT70 is an NPN RF transistor manufactured by NXP USA Inc. This component is designed for radio frequency applications, offering a collector-emitter breakdown voltage of 8V and a transition frequency of 900MHz. It has a maximum collector current of 250mA and a maximum power dissipation of 2.1W.
The transistor is housed in a SOT-223 package, suitable for surface mounting. The operating temperature range extends up to 175°C (junction temperature). The DC current gain (hFE) is a minimum of 25 at 100mA and 4.8V.
This component is RoHS3 compliant and has an MSL rating of 1. Its compact SOT-223 package makes it suitable for integration into various electronic designs where space is a consideration. The 900MHz transition frequency indicates its capability for use in higher frequency circuits.
Key electrical characteristics include a maximum collector current of 250mA and a maximum power rating of 2.1W. The NPN transistor type is standard for many amplification and switching applications in RF circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 8V.
The transition frequency is 900MHz.
The maximum collector current is 250mA.
The maximum power dissipation is 2.1W.
The maximum junction operating temperature is 175°C.
The BLT70 is available in a surface-mount SOT-223 package (TO-261-4, TO-261AA).
The minimum DC current gain (hFE) is 25 at 100mA and 4.8V.