R5F565NCHGFC#V0
Renesas
The Renesas R5F565NCHGFC#V0 is a 32-bit RXv2 core microcontroller operating at 120MHz. It features 1.5MB of Flash memory and 136 I/O pins.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
14 pcs
|
14 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Tape & Reel |
The NXP Semiconductors BLS6G3135-20,112 is a Radio Frequency Field-Effect Transistor (FET) suitable for RF applications. It features a drain-to-source voltage rating of 32V and operates within a frequency range of 3.1GHz to 3.5GHz.
Key electrical characteristics include an output power of 20W and a gain of 15.5dB. The transistor has a breakdown voltage of 60V and a drain-to-source resistance (on) of 580mΩ. It also specifies a threshold voltage of 2V, a rise time of 20ns, and a fall time of 10ns.
This component is housed in a SOT-608 surface-mount package. It has a maximum operating temperature of 150℃ and a minimum operating temperature of -65℃. The part is RoHS3 compliant and lead-free.
This RF FET is designed for applications requiring high-frequency signal amplification and power handling within its specified parameters.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage is 32V.
The operating frequency range is 3.1GHz to 3.5GHz.
The output power is 20W.
The gain is 15.5dB.
The maximum operating temperature is 150℃.
It is in a SOT-608 surface-mount package.
The status is RoHS3 Compliant.