BLS6G3135-120,112 The Flip Electronics Manufacturing Services BLS6G3135-120,112 is an RF FET Transistor. It operates with a 32V drain-to-source voltage and offers 120W of power dissipation.
Mfr Part #:

BLS6G3135-120,112

Available from 1 distributors
Mfr Name: Flip Electronics Manufacturing Services
Flip Electronics Manufacturing Services
The Flip Electronics Manufacturing Services BLS6G3135-120,112 is an RF FET Transistor. It operates with a 32V drain-to-source voltage and offers 120W of power dissipation.
✓ Total Stock: 140 pcs
$ Price Range: $3.00

BLS6G3135-120,112 Available from 1 distributor

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✓ Non-Authorised
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140 pcs
140 pcs On Request 1 On Request On Request On Request On Request On Request

BLS6G3135-120,112 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Frequency
Gain
Mounting Style
Output Power
Power Dissipation

BLS6G3135-120,112 Description

Short technical summary and product information.

The BLS6G3135-120,112 from Flip Electronics Manufacturing Services is an RF FET Transistor designed for high-frequency applications. It features a drain-to-source voltage rating of 32V and a significant power dissipation capability of 120W.

 

This transistor operates within the 3.1GHz to 3.5GHz frequency range, providing a gain of 15.5 dB. It is housed in a SOT-502 package and is designed for surface mount applications. The operating temperature range spans from -65℃ to 225℃.

 

Compliance information indicates it is RoHS3 Compliant and Lead-Free, with an MSL rating of 1 Unlimited. The REACH status is noted as REACH Unaffected.

BLS6G3135-120,112 Quick Information

Product Type: RF FET Transistor
Canonical Name: RF FET Transistor
Subcategory: RF FET Transistor

BLS6G3135-120,112 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

BLS6G3135-120,112 Estimated Pricing

Qty Low High
1+ $3.00 $3.00

Estimated market price range - modelled values for guidance only, not live distributor offers.

BLS6G3135-120,112 Features

  • 32V drain-to-source voltage rating.
  • 120W power dissipation capability.
  • Operates 3.1GHz to 3.5GHz frequency.
  • Surface mount SOT-502 package.
  • Wide -65℃ to 225℃ operating temperature.

BLS6G3135-120,112 Applications

  • Suitable for RF power amplification circuits.
  • Used in wireless communication transmitters.
  • Ideal for high-frequency RF applications.
  • Applicable in radar and satellite systems.

BLS6G3135-120,112 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the BLS6G3135-120,112?

The drain-to-source voltage is 32 V.

What is the power dissipation of the BLS6G3135-120,112?

The power dissipation is 120 W.

What is the operating frequency range for this RF FET Transistor?

The operating frequency range is 3.1GHz to 3.5GHz.

What is the gain of the BLS6G3135-120,112?

The gain is 15.5 dB.

What is the maximum operating temperature for the BLS6G3135-120,112?

The maximum operating temperature is 225 ℃.

What is the minimum operating temperature for the BLS6G3135-120,112?

The minimum operating temperature is -65 ℃.

What is the package type and mounting style for the BLS6G3135-120,112?

It is a SOT-502 package designed for surface mount.

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