BLS3135-10 The NXP Semiconductors BLS3135-10 is an NPN RF transistor designed for high-frequency applications. It features a 75V collector-emitter breakdown voltage and a 3.5GHz transition frequency.
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BLS3135-10

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors BLS3135-10 is an NPN RF transistor designed for high-frequency applications. It features a 75V collector-emitter breakdown voltage and a 3.5GHz transition frequency.
✓ Total Stock: 53 pcs
$ Price Range: $0.99

BLS3135-10 Available from 1 distributor

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✓ Non-Authorised
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53 pcs
53 pcs On Request 1 On Request On Request 12+ On Request On Request

BLS3135-10 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
SVHC Present

BLS3135-10 Description

Short technical summary and product information.

The NXP Semiconductors BLS3135-10 is an NPN RF transistor suitable for various high-frequency applications. It offers a maximum collector-emitter breakdown voltage of 75V and a transition frequency of 3.5GHz.

 

This transistor provides a gain of 9dB and can handle a maximum power of 34W. The DC current gain (hFE) is a minimum of 40 at 250mA and 5V. The maximum collector current (Ic) is 1.5A.

 

Designed for surface mounting, the BLS3135-10 comes in a SOT-445C package, also referred to as CDFM2. It operates at a maximum junction temperature of 200°C.

 

Environmental compliance includes RoHS3 compliance, MSL 1 Unlimited, and REACH unaffected status.

BLS3135-10 Quick Information

Product Type: RF Transistor
Canonical Name: NPN RF Transistor BLS3135-10
Subcategory: RF Transistor

BLS3135-10 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BLS3135-10 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BLS3135-10 Features

  • NPN RF transistor for high-frequency applications.
  • 75V collector-emitter breakdown voltage.
  • 3.5GHz transition frequency.
  • 34W maximum power handling.
  • Surface mount SOT-445C package.

BLS3135-10 Applications

  • RF power amplifier stages in communication systems.
  • Broadband matching networks for signal processing.
  • High frequency oscillator circuits requiring stability.
  • Industrial equipment operating under elevated temperatures.

BLS3135-10 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage is 75V.

What is the transition frequency of the BLS3135-10?

The transition frequency is 3.5GHz.

What is the maximum power rating?

The maximum power rating is 34W.

What is the operating temperature range?

The operating temperature is 200°C (TJ).

What package type is the BLS3135-10 supplied in?

It is supplied in a SOT-445C package.

How is the BLS3135-10 mounted?

The mounting type is surface mount.

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