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25 pcs
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25 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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The BLS2731-110 from NXP Semiconductors is an NPN silicon planar epitaxial microwave power transistor. It is designed for short and medium pulse applications, specifically for common base class-C pulsed power amplifiers used in radar applications within the 2.7 to 3.1 GHz frequency band.
Key electrical characteristics include a collector-base voltage (VCB) of 40V, a power output (PL) greater than 110W, a power gain (Gp) greater than 7dB, and a collector efficiency (ηC) greater than 35%. The transistor features internal input and output matching networks for simplified circuit design, emitter ballasting resistors for improved ruggedness, and gold metallization for excellent reliability. Its multicell geometry enhances power sharing and reduces thermal resistance.
The device is housed in a SOT-423A package with a ceramic cap, and the common base is connected to the flange. This surface-mount package is suitable for various radar system designs.
Safety precautions are necessary as this product contains beryllium oxide. It is safe if the BeO disc is not damaged. Dispose of as chemical or special waste according to local regulations.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BLS2731-110 operates in the 2.7 to 3.1 GHz band.
The power output (PL) is greater than 110W.
The power gain (Gp) is greater than 7dB.
The collector efficiency (ηC) is greater than 35%.
The BLS2731-110 is supplied in a SOT-423A package.
The maximum collector-base voltage (VCBO) is -75V.
The maximum peak collector current (ICM) is 12A.