| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,433 pcs
|
1433 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Frequency | |
| Gain | |
| Output Power | |
| Process | |
| Supply Voltage | |
| Transistor Type | |
| Type |
The Ampleon BLP8G05S-200Y is a high-performance RF Power Transistor utilizing LDMOS technology. It is designed for operation in the 0.4 to 0.5 GHz frequency range, delivering a substantial output power of up to 210W with a typical gain of 21dB.
This transistor is rated for 65V and operates at a test voltage of 28V, making it suitable for demanding RF power amplification applications. The device is housed in an SOT1138-2 package, designed for efficient thermal management and reliable mounting.
With a typical efficiency of 77%, the BLP8G05S-200Y is engineered for robust performance in communication systems, radar, and other high-power RF applications. Its LDMOS (Dual, Common Source) construction ensures excellent performance characteristics for RF power devices.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BLP8G05S-200Y has an output power of 210W.
The BLP8G05S-200Y has a gain of 21dB.
The rated voltage for the BLP8G05S-200Y is 65V.
The BLP8G05S-200Y is supplied in the SOT1138-2 package.
The typical efficiency of the BLP8G05S-200Y is 77%.