BLP7G22-10Z The BLP7G22-10Z is a 2W LDMOS driver transistor from Ampleon, designed for base station applications. It operates from 700 to 2700 MHz, with a typical gain of 17.4 dB at 2.14 GHz.
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BLP7G22-10Z

Available from 1 distributors
Mfr Name: Ampleon
Ampleon
The BLP7G22-10Z is a 2W LDMOS driver transistor from Ampleon, designed for base station applications. It operates from 700 to 2700 MHz, with a typical gain of 17.4 dB at 2.14 GHz.
Total Stock: 1 pcs
$ Price Range: $4.54 - $5.84

BLP7G22-10Z Available from 1 distributor

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BLP7G22-10Z Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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BLP7G22-10Z Description

Short technical summary and product information.

The BLP7G22-10Z is a 10W plastic LDMOS power transistor (rated for 2W output in driver stage) from Ampleon, designed for base station applications across frequencies from 700 MHz to 2700 MHz. It is configured as a dual common source LDMOS device in a surface mount package.

 

Electrical characteristics include a drain-source voltage of 28 V, typical quiescent current of 110 mA, and a gain of 17.4 dB at 2.14 GHz with 2W output. The device features integrated ESD protection and is designed for broadband operation, offering high efficiency and excellent thermal stability.

 

Packaged in the HVSON12 (SOT1179-2) thermal enhanced very thin small outline package with 12 terminals and exposed die-pad for thermal management. The package measures 6 x 4 x 0.85 mm. Mounting is surface mount.

 

Thermal resistance from junction to case is 3.2 K/W typical, with maximum junction temperature of 150°C. The device is RoHS compliant (Directive 2002/95/EC) and suitable for CDMA, W-CDMA, GSM EDGE, MC-GSM, LTE, and WiMAX applications.

BLP7G22-10Z Quick Information

Product Type: LDMOS RF Driver Transistor
Canonical Name: Ampleon BLP7G22-10Z LDMOS Driver Transistor
Subcategory: Driver Transistors

BLP7G22-10Z Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 3
REACH Status: Unaffected
Lead Free: Yes

BLP7G22-10Z Estimated Pricing

Qty Low High
1+ $5.84 $5.84
10+ $5.37 $5.37
100+ $4.54 $4.54

Estimated market price range - modelled values for guidance only, not live distributor offers.

BLP7G22-10Z Features

  • LDMOS technology for high efficiency.
  • Broadband operation from 700 to 2700 MHz.
  • Typical gain of 17.4 dB at 2.14 GHz.
  • Surface mount HVSON12 package.
  • Integrated ESD protection.

BLP7G22-10Z Applications

  • Ideal for W-CDMA and LTE base station driver stages.
  • Suitable for GSM EDGE and MC-GSM systems.
  • Used in WiMAX and CDMA applications.

BLP7G22-10Z FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating frequency range of the BLP7G22-10Z?

The device operates from 700 MHz to 2700 MHz.

What is the output power of this transistor?

The output power is 2 W.

What is the typical gain at 2.14 GHz?

Typical gain is 17.4 dB at 2.14 GHz with 2W output (from datasheet).

What is the recommended supply voltage?

The drain-source voltage is 28 V.

What package does the BLP7G22-10Z use?

It uses the HVSON12 package (SOT1179-2), a 12-lead surface mount package with exposed pad.

Is the BLP7G22-10Z RoHS compliant?

Yes, it is compliant to Directive 2002/95/EC (original RoHS).

What is the thermal resistance junction-to-case?

Typical thermal resistance is 3.2 K/W.

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