| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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The BLP7G22-10Z is a 10W plastic LDMOS power transistor (rated for 2W output in driver stage) from Ampleon, designed for base station applications across frequencies from 700 MHz to 2700 MHz. It is configured as a dual common source LDMOS device in a surface mount package.
Electrical characteristics include a drain-source voltage of 28 V, typical quiescent current of 110 mA, and a gain of 17.4 dB at 2.14 GHz with 2W output. The device features integrated ESD protection and is designed for broadband operation, offering high efficiency and excellent thermal stability.
Packaged in the HVSON12 (SOT1179-2) thermal enhanced very thin small outline package with 12 terminals and exposed die-pad for thermal management. The package measures 6 x 4 x 0.85 mm. Mounting is surface mount.
Thermal resistance from junction to case is 3.2 K/W typical, with maximum junction temperature of 150°C. The device is RoHS compliant (Directive 2002/95/EC) and suitable for CDMA, W-CDMA, GSM EDGE, MC-GSM, LTE, and WiMAX applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.84 | $5.84 |
| 10+ | $5.37 | $5.37 |
| 100+ | $4.54 | $4.54 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The device operates from 700 MHz to 2700 MHz.
The output power is 2 W.
Typical gain is 17.4 dB at 2.14 GHz with 2W output (from datasheet).
The drain-source voltage is 28 V.
It uses the HVSON12 package (SOT1179-2), a 12-lead surface mount package with exposed pad.
Yes, it is compliant to Directive 2002/95/EC (original RoHS).
Typical thermal resistance is 3.2 K/W.