| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,780 pcs
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2780 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Ampleon BLP35M805Z is a high-performance RF Power Transistor built on LDMOS technology. It operates across a wide frequency range from 0.1 GHz to 3.5 GHz, making it suitable for various RF applications.
Key electrical specifications include an output power of 5 W and a typical gain of 18 dB. The transistor is designed to operate with a supply voltage of 32 V and has a typical current draw of 9 mA. Its efficiency is rated at 17% typical.
Packaged in a SOT1371-1 case, this component is classified as an RF Power Discrete Transistor. It is manufactured using the LDMOS process, known for its suitability in high-frequency power applications.
This component is RoHS3 compliant and has an MSL rating of 1, indicating unlimited usability under standard conditions. The REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BLP35M805Z operates from 0.1 GHz to 3.5 GHz.
The BLP35M805Z has an output power of 5 W.
The typical gain for the BLP35M805Z is 18 dB.
The BLP35M805Z is designed for a supply voltage of 32 V.
The BLP35M805Z is supplied in a SOT1371-1 package.
The BLP35M805Z is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BLP35M805Z is 1 Unlimited.