| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,200 pcs
|
5200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Efficiency | |
| Gain | |
| Output Power | |
| Process | |
| Supply Voltage | |
| Type |
The Ampleon BLP25M710Z is an RF Power Transistor suitable for applications operating from HF up to 2500 MHz. This transistor delivers a robust 10W of output power with a typical gain of 16dB and an efficiency of 23%.
Designed with a supply voltage of 28V and drawing 110mA, the BLP25M710Z utilizes an LDMOS process. It is housed in a standard plastic package, making it suitable for various RF power amplification needs.
Key electrical characteristics include a maximum frequency of 2.5 GHz, 10W output power, and 16dB gain. The device operates efficiently with a typical efficiency of 23% at a 28V supply voltage.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum frequency for the BLP25M710Z is 2.5 GHz.
The BLP25M710Z has an output power of 10 W.
The typical gain of the BLP25M710Z is 16 dB.
The supply voltage for the BLP25M710Z is 28 V.
The BLP25M710Z is supplied in a plastic package.