BLM9D1822-30BZ BLM9D1822-30BZ is a dual LDMOS RF power transistor from Ampleon, designed for 1.8-2.2GHz frequency range with 29.3dB gain and 45.9dBm output power at 28V drain voltage.
Mfr Part #:

BLM9D1822-30BZ

Available from 1 distributors
Mfr Name: Ampleon
Ampleon
BLM9D1822-30BZ is a dual LDMOS RF power transistor from Ampleon, designed for 1.8-2.2GHz frequency range with 29.3dB gain and 45.9dBm output power at 28V drain voltage.
Total Stock: 10 pcs
$ Price Range: $19.80 - $29.72

BLM9D1822-30BZ Available from 1 distributor

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BLM9D1822-30BZ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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BLM9D1822-30BZ Description

Short technical summary and product information.

The BLM9D1822-30BZ is a 2-stage integrated Doherty MMIC using Ampleon's GEN9 LDMOS technology. It combines carrier and peaking devices, input splitter, and output combiner in a single 20-QFN Exposed Pad package. Operating from 1.8GHz to 2.2GHz, it delivers 29.3dB gain and 45.9dBm output power at 28V drain voltage. The device features integrated ESD protection, excellent thermal stability, and independent control of carrier and peaking bias. It is designed for RF power applications in multi-carrier GSM, W-CDMA, and LTE base stations. The part is RoHS compliant (unverified) and has an MSL rating of 1 (unlimited) per datasheet, though this is unverified. Mounting is surface mount with supplier device package 20-PQFN (8x8).

BLM9D1822-30BZ Quick Information

Product Type: LDMOS RF Power Transistor
Canonical Name: BLM9D1822-30BZ
Subcategory: RF Power MOSFETs

BLM9D1822-30BZ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 3
REACH Status: REACH Unaffected

BLM9D1822-30BZ Estimated Pricing

Qty Low High
1+ $29.72 $29.72
10+ $24.00 $24.00
25+ $22.57 $22.57
100+ $21.77 $21.77
500+ $19.80 $19.80

Estimated market price range - modelled values for guidance only, not live distributor offers.

BLM9D1822-30BZ Features

  • Dual LDMOS configuration for Doherty operation.
  • Integrated input splitter and output combiner.
  • Broadband operation from 1.8GHz to 2.2GHz.
  • 29.3dB gain and 45.9dBm output power.
  • Surface mount 20-QFN exposed pad package.

BLM9D1822-30BZ Applications

  • RF power for multi-carrier GSM base stations.
  • W-CDMA and LTE base station amplifiers.
  • General purpose driver or small cell final.
  • Multi-standard transmitter applications.

BLM9D1822-30BZ FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the BLM9D1822-30BZ?

The drain-source voltage is 28 V.

What is the package type of the BLM9D1822-30BZ?

The device is available in a 20-QFN Exposed Pad package, with supplier device package 20-PQFN (8x8).

Is the BLM9D1822-30BZ RoHS compliant?

The datasheet indicates RoHS compliance, but this is unverified.

What is the frequency range of the BLM9D1822-30BZ?

The device operates from 1.8 GHz to 2.2 GHz.

What is the gain of the BLM9D1822-30BZ?

The typical gain is 29.3 dB.

What is the output power of the BLM9D1822-30BZ?

The output power is 45.9 dBm.

What is the configuration of the BLM9D1822-30BZ?

It is a dual configuration LDMOS, with carrier and peaking devices for Doherty operation.

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