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BLM8D1822S-50PBG BLM8D1822S-50PBG is a dual-section, 2-stage integrated Doherty MMIC from Ampleon using LDMOS technology. It delivers 5W average output power with 26.5dB gain and 37% drain efficiency at 28V supply.
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BLM8D1822S-50PBG

Available from 1 distributors
Mfr Name: Ampleon
Ampleon
BLM8D1822S-50PBG is a dual-section, 2-stage integrated Doherty MMIC from Ampleon using LDMOS technology. It delivers 5W average output power with 26.5dB gain and 37% drain efficiency at 28V supply.
✓ Total Stock: 15 pcs

BLM8D1822S-50PBG Available from 1 distributor

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BLM8D1822S-50PBG Specifications Quick View

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BLM8D1822S-50PBG Description

Short technical summary and product information.

The BLM8D1822S-50PBG is a dual-section, 2-stage fully integrated Doherty MMIC (Monolithic Microwave Integrated Circuit) designed and manufactured by Ampleon using advanced GEN8 LDMOS technology. It integrates the input splitter, output combiner, carrier and peaking devices in a single package, simplifying design and reducing board space.

 

This device operates over a broadband frequency range of 1.805 GHz to 2.17 GHz, making it suitable for multi-band base station applications. At 28 V supply voltage, it delivers 5 W average output power with a typical gain of 26.5 dB and drain efficiency of 37% (single carrier W-CDMA test signal). The quiescent current is 104 mA per carrier section. It features integrated temperature compensated bias and independent control of carrier and peaking bias for optimal performance.

 

The BLM8D1822S-50PBG is housed in a surface mount SOT-1212-2 package (16-HSOP) with gull wing or flat lead options. It is designed for RF power amplification in multi-carrier and multi-standard GSM, W-CDMA, and LTE base stations. It can be used in dual section, single-ended, quadrature combined, or push-pull circuit topologies. Integrated ESD protection enhances reliability.

BLM8D1822S-50PBG Quick Information

Product Type: RF Power LDMOS Transistor
Series: BLM8D1822S-50PB
Canonical Name: BLM8D1822S-50PBG LDMOS 2-Stage Integrated Doherty MMIC
Subcategory: RF Power Transistors

BLM8D1822S-50PBG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 3
REACH Status: REACH Unaffected
Lead Free: Yes

BLM8D1822S-50PBG Features

  • Integrated input splitter and output combiner.
  • High efficiency LDMOS Doherty design.
  • Broadband frequency range 1.8-2.17 GHz.
  • 5W average output power at 28V.
  • Surface mount SOT-1212-2 package.

BLM8D1822S-50PBG Applications

  • RF power for multi-carrier GSM base stations.
  • W-CDMA and LTE base station transmitters.
  • Dual section or single-ended circuit topologies.
  • Quadrature combined or push-pull configurations.

BLM8D1822S-50PBG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the supply voltage for BLM8D1822S-50PBG?

The supply voltage (VDS) is 28 V.

What package does the BLM8D1822S-50PBG come in?

It is available in surface mount SOT-1212-2 package (16-HSOP).

Is the BLM8D1822S-50PBG RoHS compliant?

Yes, it is listed as RoHS3 Compliant.

What is the frequency range of BLM8D1822S-50PBG?

1.805 GHz to 2.17 GHz.

What is the typical gain of BLM8D1822S-50PBG?

26.5 dB at 5W output power and 2167.5 MHz.

What is the output power rating?

5 W average output power.

What technology is used in BLM8D1822S-50PBG?

LDMOS (Laterally Diffused Metal Oxide Semiconductor).

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