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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Ampleon BLM7G1822S-40PBY is a dual-section RF power LDMOS FET designed for broadband operation from 1.81 GHz to 2.17 GHz. It features a gain of 31.5 dB and an output power of 4 W per section at a drain-source voltage of 28 V. The device uses advanced LDMOS technology for high efficiency and linearity, making it suitable for use in multi-carrier and multi-standard base station applications.
The FET is configured as a dual device, enabling flexible circuit topologies such as Doherty, push-pull, or quadrature combined. It has an integrated temperature-compensated bias and ESD protection. The device requires a drain current of 40 mA under quiescent conditions.
Packaged in a surface-mount SOT-1211-1 case (16-HSOPF), the BLM7G1822S-40PBY is designed for automated assembly. The exposed backside of the package serves as the ground terminal. The device is RoHS compliant and has an MSL rating of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $43.38 | $43.38 |
| 10+ | $37.97 | $37.97 |
| 25+ | $36.09 | $36.09 |
| 100+ | $32.87 | $32.87 |
| 200+ | $31.72 | $31.72 |
| 300+ | $31.08 | $31.08 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 28 V.
The device is available in a surface-mount SOT-1211-1 package, also known as 16-HSOPF.
The RoHS status is listed as RoHS3 Compliant, but this is unverified and should be confirmed with the manufacturer.
The typical gain is 31.5 dB.
It operates from 1.81 GHz to 2.17 GHz.
The output power is 4 W per section.
The configuration is dual, meaning it contains two independent FET sections.