| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,853 pcs
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5853 pcs | On Request | 1 | On Request | On Request | 15+18+ | On Request | On Request |
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The BLF9G20LS-160V from NXP Semiconductors is a high-performance RF Power LDMOS Transistor designed for demanding applications. This transistor boasts a Drain-Source Voltage rating of 65V, ensuring robust operation under various conditions.
A key feature of the BLF9G20LS-160V is its capability to withstand significant load mismatches, specifically a Voltage Standing Wave Ratio (VSWR) of 10:1 across all phases. This resilience is maintained under specific operating conditions, including a Drain-Source Voltage of 28V, a quiescent Drain Current (IDq) of 800 mA, a Power Level (PL) of 140W continuous wave (CW), and a frequency of 1805 MHz.
This component is suitable for applications requiring reliable high-power RF amplification. Its robust design makes it a dependable choice for engineers working on advanced RF systems.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Voltage is 65V.
It can withstand a load mismatch corresponding to VSWR = 10:1 through all phases under specified conditions.
The load mismatch capability is maintained under VDS = 28 V; IDq = 800 mA; PL = 140 W (CW); f = 1805 MHz.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.
Yes, the REACH status is REACH Unaffected.