BLF8G24LS-200P The NXP Semiconductors BLF8G24LS-200P is an RF FET LDMOS transistor. It offers a rated voltage of 65V and an output power of 45W.
Mfr Part #:

BLF8G24LS-200P

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors BLF8G24LS-200P is an RF FET LDMOS transistor. It offers a rated voltage of 65V and an output power of 45W.
✓ Total Stock: 485 pcs
$ Price Range: $1.17

BLF8G24LS-200P Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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485 pcs
485 pcs On Request 1 On Request On Request 1513+ On Request On Request

BLF8G24LS-200P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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BLF8G24LS-200P Description

Short technical summary and product information.

The BLF8G24LS-200P from NXP Semiconductors is a high-performance RF FET LDMOS transistor designed for demanding applications. This component features a rated voltage of 65V and provides a significant output power of 45W, making it suitable for various RF power amplification tasks.

 

With a gain of 19dB and operating within the 2.3GHz to 2.4GHz frequency range, the BLF8G24LS-200P is engineered for efficiency and reliability. The LDMOS technology ensures robust performance characteristics required in modern RF systems.

 

Packaged in a SOT-1244B case, this device is designed for chassis mounting and is supplied on tape and reel for automated assembly processes. Its specifications make it a valuable component for designers working on advanced RF solutions.

BLF8G24LS-200P Quick Information

Product Type: RF FET LDMOS
Series: BLF8G24LS
Canonical Name: BLF8G24LS-200P RF FET LDMOS

BLF8G24LS-200P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BLF8G24LS-200P Estimated Pricing

Qty Low High
1+ $1.17 $1.17

Estimated market price range - modelled values for guidance only, not live distributor offers.

BLF8G24LS-200P Features

  • 65V rated voltage for robust operation.
  • 45W output power capability.
  • 19dB gain for signal amplification.
  • LDMOS technology for high performance.
  • SOT-1244B package for chassis mounting.

BLF8G24LS-200P Applications

  • Used in 2.3-2.4GHz RF power amplifiers
  • Suitable for LDMOS-based transmitter stages
  • Designed for 45W output power applications
  • Applied in 65V rated RF amplifier circuits

BLF8G24LS-200P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the rated voltage for the BLF8G24LS-200P?

The rated voltage for the BLF8G24LS-200P is 65V.

What is the output power of the BLF8G24LS-200P?

The BLF8G24LS-200P has an output power of 45W.

What is the gain of the BLF8G24LS-200P?

The gain of the BLF8G24LS-200P is 19dB.

What is the frequency range for the BLF8G24LS-200P?

The BLF8G24LS-200P operates in the frequency range of 2.3GHz to 2.4GHz.

What technology does the BLF8G24LS-200P use?

The BLF8G24LS-200P uses LDMOS technology.

What is the package type for the BLF8G24LS-200P?

The BLF8G24LS-200P is supplied in a SOT-1244B package.

How is the BLF8G24LS-200P mounted?

The BLF8G24LS-200P is designed for chassis mounting.

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