| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
485 pcs
|
485 pcs | On Request | 1 | On Request | On Request | 1513+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present |
The BLF8G24LS-200P from NXP Semiconductors is a high-performance RF FET LDMOS transistor designed for demanding applications. This component features a rated voltage of 65V and provides a significant output power of 45W, making it suitable for various RF power amplification tasks.
With a gain of 19dB and operating within the 2.3GHz to 2.4GHz frequency range, the BLF8G24LS-200P is engineered for efficiency and reliability. The LDMOS technology ensures robust performance characteristics required in modern RF systems.
Packaged in a SOT-1244B case, this device is designed for chassis mounting and is supplied on tape and reel for automated assembly processes. Its specifications make it a valuable component for designers working on advanced RF solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The rated voltage for the BLF8G24LS-200P is 65V.
The BLF8G24LS-200P has an output power of 45W.
The gain of the BLF8G24LS-200P is 19dB.
The BLF8G24LS-200P operates in the frequency range of 2.3GHz to 2.4GHz.
The BLF8G24LS-200P uses LDMOS technology.
The BLF8G24LS-200P is supplied in a SOT-1244B package.
The BLF8G24LS-200P is designed for chassis mounting.