| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,044 pcs
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4044 pcs | On Request | 1 | On Request | On Request | 11+13+ | On Request | On Request |
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| Manufacturer Name |
The BLF8G22LS-160BV from NXP Semiconductors is a high-performance RF Power Field-Effect Transistor designed for demanding applications. This transistor offers a minimum breakdown voltage of 65V, ensuring robust operation under various conditions.
With an operating temperature range spanning from -40°C to 125°C, the BLF8G22LS-160BV is suitable for use in a wide array of environmental conditions. Its design as an N-Channel, Metal-oxide Semiconductor FET makes it a versatile component for RF power amplification circuits.
The part number BLF8G22LS-160BV is associated with Ampleon, indicating potential cross-reference or manufacturing lineage. The component is classified under Transistors - FETs, MOSFETs - RF, highlighting its specialized function in radio frequency applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage is 65V.
The operating temperature range is from -40°C to 125°C.
The RoHS status is RoHS3 Compliant.
The MSL is 1 Unlimited.
The REACH status is REACH Unaffected.