| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,382 pcs
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2382 pcs | On Request | 1 | On Request | On Request | 1527+ | On Request | On Request |
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| SVHC Present |
The BLF8G20LS-400PGV is a Power LDMOS transistor manufactured by NXP Semiconductors. This component is designed for RF power amplification, operating within a frequency range of 1.805 to 1.995 GHz. It delivers a significant power output of 400W and provides a typical gain of 19 dB.
With a drain-source voltage rating of 65V, the BLF8G20LS-400PGV is suitable for demanding RF applications. The transistor is housed in a SOT1242C package, indicating a surface-mount form factor. Its LDMOS technology ensures efficient power handling and performance in its intended frequency band.
This RF power transistor is a key component for systems requiring high-power RF signal generation or amplification. Its specifications make it suitable for various communication infrastructure and high-frequency electronic systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BLF8G20LS-400PGV has a power output of 400W.
The BLF8G20LS-400PGV operates from 1.805 GHz to 1.995 GHz.
The typical gain is 19 dB.
It uses an SOT1242C package.
The drain-source voltage rating is 65V.
It uses LDMOS technology.