BLF8G20LS-400PGV The NXP Semiconductors BLF8G20LS-400PGV is a Power LDMOS transistor designed for RF applications. It offers 400W of power output and 19 dB of gain.
Mfr Part #:

BLF8G20LS-400PGV

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors BLF8G20LS-400PGV is a Power LDMOS transistor designed for RF applications. It offers 400W of power output and 19 dB of gain.
✓ Total Stock: 2,382 pcs
$ Price Range: $0.99

BLF8G20LS-400PGV Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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2,382 pcs
2382 pcs On Request 1 On Request On Request 1527+ On Request On Request

BLF8G20LS-400PGV Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
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BLF8G20LS-400PGV Description

Short technical summary and product information.

The BLF8G20LS-400PGV is a Power LDMOS transistor manufactured by NXP Semiconductors. This component is designed for RF power amplification, operating within a frequency range of 1.805 to 1.995 GHz. It delivers a significant power output of 400W and provides a typical gain of 19 dB.

 

With a drain-source voltage rating of 65V, the BLF8G20LS-400PGV is suitable for demanding RF applications. The transistor is housed in a SOT1242C package, indicating a surface-mount form factor. Its LDMOS technology ensures efficient power handling and performance in its intended frequency band.

 

This RF power transistor is a key component for systems requiring high-power RF signal generation or amplification. Its specifications make it suitable for various communication infrastructure and high-frequency electronic systems.

BLF8G20LS-400PGV Quick Information

Product Type: RF Amplifier
Series: BLF8G20LS
Canonical Name: Power LDMOS Transistor
Subcategory: RF Amplifiers

BLF8G20LS-400PGV Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BLF8G20LS-400PGV Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BLF8G20LS-400PGV Features

  • Power LDMOS transistor for RF applications.
  • 400W power output capability.
  • 19 dB typical gain.
  • Operates from 1.805 to 1.995 GHz.
  • 65V drain-source voltage rating.

BLF8G20LS-400PGV Applications

  • High-power RF amplification.
  • Communication infrastructure systems.
  • RF signal generation.
  • Broadband RF applications.

BLF8G20LS-400PGV FAQs

6 frequently asked questions generated from this part’s specifications.
What is the power output of the BLF8G20LS-400PGV?

The BLF8G20LS-400PGV has a power output of 400W.

What is the frequency range of this device?

The BLF8G20LS-400PGV operates from 1.805 GHz to 1.995 GHz.

What is the typical gain of the BLF8G20LS-400PGV?

The typical gain is 19 dB.

What package does the BLF8G20LS-400PGV use?

It uses an SOT1242C package.

What is the drain-source voltage rating?

The drain-source voltage rating is 65V.

What technology is used in this transistor?

It uses LDMOS technology.

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