| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
58 pcs
|
58 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name |
The BLF8G20LS-220 from NXP Semiconductors is a high-performance RF FET LDMOS transistor designed for demanding applications. It features a rated voltage of 65V and provides a gain of 18.9dB.
This transistor is capable of delivering an output power of 55W and operates efficiently within the frequency range of 1.81GHz to 1.88GHz. The test conditions include a voltage of 28V and a current of 1.6A.
Packaged in a SOT-502B case and supplied in trays, the BLF8G20LS-220 is suitable for various RF power amplification tasks. Its LDMOS technology ensures robust performance and reliability in its intended operating environment.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
55W.
1.81GHz to 1.88GHz.
18.9dB.
65V.
SOT-502B.
LDMOS.