DistyParts Icon
BLF8G09LS-400PGW The NXP Semiconductors BLF8G09LS-400PGW is an RF Power LDMOS Transistor. It offers 400W of power output and 20.6 dB of gain.
Mfr Part #:

BLF8G09LS-400PGW

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors BLF8G09LS-400PGW is an RF Power LDMOS Transistor. It offers 400W of power output and 20.6 dB of gain.
✓ Total Stock: 69 pcs
$ Price Range: $0.99

BLF8G09LS-400PGW Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
69 pcs
On Request
69 pcs On Request 1 On Request On Request 1436+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BLF8G09LS-400PGW Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
View Similar Products (0)

BLF8G09LS-400PGW Description

Short technical summary and product information.

The BLF8G09LS-400PGW is a Power LDMOS transistor manufactured by NXP Semiconductors. This RF Power Transistor operates within a frequency range of 0.716 to 0.96 GHz, delivering a power output of 400W with a gain of 20.6 dB.

 

Designed for demanding RF applications, this transistor features a drain-source voltage rating of 65V and operates at a nominal voltage of 28V. It is housed in a SOT1242B package.

 

This component is RoHS3 Compliant, has an MSL rating of 1, and is REACH Unaffected. Its specifications make it suitable for various high-frequency power amplification tasks.

BLF8G09LS-400PGW Quick Information

Product Type: RF Power LDMOS Transistor
Series: BLF8G09LS-400PGW
Canonical Name: BLF8G09LS-400PGW RF Power LDMOS Transistor
Subcategory: RF Power Transistor

BLF8G09LS-400PGW Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BLF8G09LS-400PGW Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BLF8G09LS-400PGW Features

  • 400W power output capability.
  • 20.6 dB typical gain.
  • Operates from 0.716 to 0.96 GHz.
  • 65V drain-source voltage rating.
  • 28V nominal operating voltage.

BLF8G09LS-400PGW Applications

  • Suitable for high-frequency power amplification.
  • Designed for RF power applications.
  • Used in communication systems.
  • Ideal for power amplifier stages.

BLF8G09LS-400PGW FAQs

6 frequently asked questions generated from this part’s specifications.
What is the power output of the BLF8G09LS-400PGW?

The BLF8G09LS-400PGW has a power output of 400W.

What is the operating frequency range for this RF transistor?

This RF transistor operates from 0.716 to 0.96 GHz.

What is the gain of the BLF8G09LS-400PGW?

The gain of the BLF8G09LS-400PGW is 20.6 dB.

What is the drain-source voltage rating?

The drain-source voltage rating is 65V.

What is the typical operating voltage?

The typical operating voltage is 28V.

What package type is the BLF8G09LS-400PGW in?

The BLF8G09LS-400PGW is in the SOT1242B package.

Home

Categories