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264 pcs
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264 pcs | On Request | 1 | On Request | On Request | 1436+ | On Request | On Request |
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The BLF8G09LS-270GW from NXP Semiconductors is a high-performance RF FET LDMOS transistor designed for demanding RF applications. This component is rated for a voltage of 65V and provides a significant gain of 20dB, making it suitable for power amplification stages.
Operating within the frequency range of 718.5MHz to 725.5MHz, the BLF8G09LS-270GW is engineered for specific communication bands. It has a test voltage of 28V and a test current of 2A, with an output power capability of 67W. The transistor type is LDMOS, known for its efficiency and performance in RF power applications.
Packaged in an SOT-1244B case, this component is supplied in a tube. Its robust design and specifications make it a reliable choice for engineers developing advanced RF systems requiring stable and efficient power amplification.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The rated voltage for the BLF8G09LS-270GW is 65V.
The BLF8G09LS-270GW transistor has a gain of 20dB.
The BLF8G09LS-270GW operates in the frequency range of 718.5MHz to 725.5MHz.
The BLF8G09LS-270GW is an LDMOS transistor.
The BLF8G09LS-270GW is supplied in the SOT-1244B package.
The BLF8G09LS-270GW has an output power of 67W.