BLF8G09LS-270GW The NXP Semiconductors BLF8G09LS-270GW is an RF FET LDMOS transistor. It features a rated voltage of 65V, a gain of 20dB, and operates within the 718.5MHz to 725.5MHz frequency range.
Mfr Part #:

BLF8G09LS-270GW

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors BLF8G09LS-270GW is an RF FET LDMOS transistor. It features a rated voltage of 65V, a gain of 20dB, and operates within the 718.5MHz to 725.5MHz frequency range.
Total Stock: 264 pcs
$ Price Range: $0.99

BLF8G09LS-270GW Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
264 pcs
264 pcs On Request 1 On Request On Request 1436+ On Request On Request

BLF8G09LS-270GW Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Frequency
Gain
SVHC Present
Supplier Device Package
Transistor Type

BLF8G09LS-270GW Description

Short technical summary and product information.

The BLF8G09LS-270GW from NXP Semiconductors is a high-performance RF FET LDMOS transistor designed for demanding RF applications. This component is rated for a voltage of 65V and provides a significant gain of 20dB, making it suitable for power amplification stages.

 

Operating within the frequency range of 718.5MHz to 725.5MHz, the BLF8G09LS-270GW is engineered for specific communication bands. It has a test voltage of 28V and a test current of 2A, with an output power capability of 67W. The transistor type is LDMOS, known for its efficiency and performance in RF power applications.

 

Packaged in an SOT-1244B case, this component is supplied in a tube. Its robust design and specifications make it a reliable choice for engineers developing advanced RF systems requiring stable and efficient power amplification.

BLF8G09LS-270GW Quick Information

Product Type: RF FET LDMOS
Series: BLF8G09LS-270GW
Canonical Name: BLF8G09LS-270GW RF FET LDMOS
Subcategory: RF Front End (LNA + PA)

BLF8G09LS-270GW Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BLF8G09LS-270GW Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BLF8G09LS-270GW Features

  • Rated for 65V DC operation.
  • Provides 20dB of signal gain.
  • Operates from 718.5MHz to 725.5MHz.
  • LDMOS transistor technology.
  • Packaged in SOT-1244B.

BLF8G09LS-270GW Applications

  • Ideal for RF power amplifiers.
  • Suitable for communication systems.
  • Used in high-frequency circuits.
  • Designed for demanding RF applications.

BLF8G09LS-270GW FAQs

6 frequently asked questions generated from this part’s specifications.
What is the rated voltage for the BLF8G09LS-270GW?

The rated voltage for the BLF8G09LS-270GW is 65V.

What is the gain of the BLF8G09LS-270GW transistor?

The BLF8G09LS-270GW transistor has a gain of 20dB.

What is the operating frequency range for the BLF8G09LS-270GW?

The BLF8G09LS-270GW operates in the frequency range of 718.5MHz to 725.5MHz.

What type of transistor is the BLF8G09LS-270GW?

The BLF8G09LS-270GW is an LDMOS transistor.

What package is the BLF8G09LS-270GW supplied in?

The BLF8G09LS-270GW is supplied in the SOT-1244B package.

What is the output power of the BLF8G09LS-270GW?

The BLF8G09LS-270GW has an output power of 67W.

BLF8G09LS-270GW Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
View All Alternate Parts
BLF8G09LS-270GW
BLF8G09LS-270GW
Ampleon
The Ampleon BLF8G09LS-270GW is an RF FET LDMOS transistor rated for 65V with a 20dB gain. It delivers 67W of output power.
View Part
Home
Account

Categories