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BLF888ESU The BLF888ESU is an RF Power Transistor from Ampleon, designed for operation between 0.47 and 0.79 GHz. It delivers a significant output power of 750W with a gain of 17dB.
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BLF888ESU

Available from 1 distributors
Mfr Name: Flip Electronics Manufacturing Services
Flip Electronics Manufacturing Services
The BLF888ESU is an RF Power Transistor from Ampleon, designed for operation between 0.47 and 0.79 GHz. It delivers a significant output power of 750W with a gain of 17dB.
✓ Total Stock: 433 pcs
$ Price Range: $0.99

BLF888ESU Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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Flip Electronics ✓
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433 pcs
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433 pcs On Request 1 On Request On Request On Request On Request On Request
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BLF888ESU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Efficiency
Gain
Output Power
Process
Supply Voltage
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BLF888ESU Description

Short technical summary and product information.

The BLF888ESU is an RF Power Transistor manufactured by Ampleon, utilizing an LDMOS process. This component is engineered for high-frequency applications, operating within a range of 0.47 GHz to 0.79 GHz.

 

Key electrical characteristics include an impressive output power of 750 W and a gain of 17 dB. The transistor is designed to operate with a supply voltage of 50 V and exhibits a typical efficiency of 52%.

 

Packaged in a SOT539A case, the BLF888ESU is suitable for various RF power amplification needs. Its specifications make it a robust choice for demanding RF applications.

BLF888ESU Quick Information

Product Type: RF Power Transistor
Canonical Name: BLF888ESU RF Power Transistor
Subcategory: RF Power Transistors

BLF888ESU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BLF888ESU Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BLF888ESU Features

  • Operates from 0.47 to 0.79 GHz.
  • Provides 750W of output power.
  • Features 17dB of signal gain.
  • Designed for 50V supply voltage.
  • Utilizes LDMOS process technology.

BLF888ESU Applications

  • Suitable for RF power amplification applications.
  • Used in wireless communication transmitters.
  • Ideal for high-frequency RF amplifier circuits.
  • Applicable in radar and satellite communication systems.

BLF888ESU FAQs

6 frequently asked questions generated from this part’s specifications.
What is the operating frequency range of the BLF888ESU?

The BLF888ESU operates from 0.47 GHz to 0.79 GHz.

What is the output power of the BLF888ESU?

The BLF888ESU has an output power of 750 W.

What is the gain of the BLF888ESU RF Power Transistor?

The gain of the BLF888ESU is 17 dB.

What is the typical efficiency of the BLF888ESU?

The typical efficiency of the BLF888ESU is 52%.

What is the supply voltage for the BLF888ESU?

The BLF888ESU requires a supply voltage of 50 V.

What package type is the BLF888ESU supplied in?

The BLF888ESU is supplied in the SOT539A package.

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