| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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290 pcs
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290 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
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The BLF888B from NXP Semiconductors is a high-performance RF FET LDMOS transistor designed for demanding applications. It features a rated voltage of 104V and provides a significant gain of 21dB at an operating frequency of 860MHz. The transistor is capable of delivering an output power of 250W and is tested at 50V with a current of 1.3A.
This component is housed in a SOT539A package, suitable for surface mounting. Its LDMOS (Dual), Common Source transistor type ensures robust performance in RF circuits. The BLF888B is delivered in tube packaging.
Key electrical characteristics include a test voltage of 50V and a test current of 1.3A, contributing to its reliable operation in specified conditions. The device is designed for applications requiring high gain and power at RF frequencies.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BLF888B operates at 860MHz.
The BLF888B has an output power of 250W.
The BLF888B has a gain of 21dB.
The BLF888B is packaged in a SOT539A package.
The BLF888B is a dual LDMOS transistor in a common source configuration.
The BLF888B has a rated voltage of 104V.