BLF888A,112 The Ampleon BLF888A,112 is an RF Power Transistor designed for broadcast and industrial applications. It offers 600W output power and 20dB gain.
Mfr Part #:

BLF888A,112

Available from 1 distributors
Mfr Name: Flip Electronics Manufacturing Services
Flip Electronics Manufacturing Services
The Ampleon BLF888A,112 is an RF Power Transistor designed for broadcast and industrial applications. It offers 600W output power and 20dB gain.
✓ Total Stock: 212 pcs
$ Price Range: $0.99

BLF888A,112 Available from 1 distributor

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BLF888A,112 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Efficiency
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BLF888A,112 Description

Short technical summary and product information.

The Ampleon BLF888A,112 is a 600W LDMOS RF power transistor suitable for broadcast transmitter and industrial applications. It operates within a frequency range of 0.47 to 0.86 GHz, providing a typical gain of 20 dB and a typical efficiency of 58% at a supply voltage of 50V.

 

This device features internal input matching for high gain and broadband operation, contributing to its excellent ruggedness with a VSWR rating of up to 40:1. The LDMOS process ensures optimum thermal behavior and reliability, with a junction-to-case thermal resistance of 0.15 K/W.

 

Designed for broadband operation from HF to 1500 MHz, the BLF888A,112 is ideal for both digital and analog transmitter applications. Its robust design and high power gain make it a reliable choice for demanding communication and industrial systems.

 

The transistor is packaged in an SOT539A package.

BLF888A,112 Quick Information

Product Type: RF Power Transistor
Canonical Name: Ampleon BLF888A,112 RF Power Transistor
Subcategory: RF Power Transistor

BLF888A,112 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BLF888A,112 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BLF888A,112 Features

  • 600W LDMOS RF power transistor.
  • Broadband operation from 0.47 to 0.86 GHz.
  • High power gain of 20 dB.
  • Excellent ruggedness with VSWR up to 40:1.
  • SOT539A package for reliable thermal performance.

BLF888A,112 Applications

  • Ideal for broadcast transmitter applications.
  • Suitable for industrial applications in UHF band.
  • Designed for digital and analog transmitters.
  • Used in communication transmitter applications.

BLF888A,112 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the output power of the BLF888A,112?

The output power is 600 W.

What is the frequency range for the BLF888A,112?

The frequency range is 0.47 to 0.86 GHz.

What is the typical gain of the BLF888A,112?

The typical gain is 20 dB.

What is the supply voltage for this RF power transistor?

The supply voltage is 50 V.

What is the package type for the BLF888A,112?

The package type is SOT539A.

What is the RoHS compliance status?

It is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The MSL is 1 Unlimited.

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