BLF888

The BLF888 from NXP Semiconductors is a 500 W LDMOS RF power transistor optimized for broadcast transmitter and industrial applications. It is designed for digital applications and can deliver 110 W average DVB-T broadband power across the full UHF band, from 470 MHz to 860 MHz.

Key performance metrics include a peak envelope power load power of 500 W and a power gain of 19 dB at 860 MHz under specific test conditions (VDS = 50 V, IDq = 1.3 A). The transistor also exhibits a drain efficiency of 46% and third-order intermodulation distortion of -32 dBc under these conditions. For DVB applications at 858 MHz, it provides 110 W average output power with 31% drain efficiency and a shoulder distance of -31 dBc.

The BLF888 features integrated ESD protection and excellent ruggedness, making it suitable for demanding digital transmitter applications. Its absolute maximum ratings include a drain-source voltage of 104 V and a gate-source voltage range of -0.5 to +11 V. The junction temperature is rated up to 200 °C, with a storage temperature range of -65 to +150 °C.

Packaged in an SOT979A surface-mount package, this transistor is designed for communication transmitter applications in the UHF band and industrial applications within the same frequency range.