BLF879P,112 The Ampleon BLF879P,112 is an RF Power Transistor designed for high-frequency applications. It offers a robust output power of 500W and a gain of 20dB.
Mfr Part #:

BLF879P,112

Available from 1 distributors
Mfr Name: Flip Electronics Manufacturing Services
Flip Electronics Manufacturing Services
The Ampleon BLF879P,112 is an RF Power Transistor designed for high-frequency applications. It offers a robust output power of 500W and a gain of 20dB.
✓ Total Stock: 495 pcs
$ Price Range: $0.99

BLF879P,112 Available from 1 distributor

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✓ Non-Authorised
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495 pcs
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BLF879P,112 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Efficiency
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Output Power
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Supply Voltage
Type

BLF879P,112 Description

Short technical summary and product information.

The Ampleon BLF879P,112 is a high-performance RF Power Transistor operating within a frequency range of 0.47 to 0.86 GHz. This LDMOS transistor delivers a significant output power of 500W with a typical gain of 20 dB and an efficiency of 33%.

 

Designed for demanding applications, it operates with a supply voltage of 42V and draws a current of 1300 mA. The transistor is housed in a SOT-539A package, suitable for surface mounting.

 

This RF Power Discrete Transistor is built using the LDMOS process, ensuring reliability and performance in RF power amplification circuits. Its specifications make it a suitable component for various high-power RF applications.

BLF879P,112 Quick Information

Product Type: RF Power Transistor
Canonical Name: BLF879P,112 RF Power Transistor
Subcategory: RF Power Discrete Transistors

BLF879P,112 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BLF879P,112 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BLF879P,112 Features

  • 500W output power capability.
  • Operates from 0.47 to 0.86 GHz.
  • Provides 20 dB typical gain.
  • Requires 42V supply voltage.
  • LDMOS process for RF performance.

BLF879P,112 Applications

  • Used in RF transmission systems
  • Suitable for broadcast transmitters
  • Ideal for high-frequency RF amplification
  • Supports surface mounting in electronic assemblies

BLF879P,112 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the output power of the BLF879P,112?

The output power is 500 W.

What is the frequency range for the BLF879P,112?

The frequency range is 0.47 GHz to 0.86 GHz.

What is the typical gain of the BLF879P,112?

The typical gain is 20 dB.

What is the supply voltage for this RF Power Transistor?

The supply voltage is 42 V.

What package type is the BLF879P,112 in?

The package type is SOT-539A.

What is the typical efficiency of the BLF879P,112?

The typical efficiency is 33 %.

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