| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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382 pcs
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382 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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The BLF872 from NXP Semiconductors is a 300 W LDMOS RF power transistor suitable for broadcast transmitter and industrial applications. It delivers 250 W broadband power across the full UHF band, from 470 MHz to 860 MHz, making it ideal for digital transmitter applications due to its excellent ruggedness and broadband performance.
Key features include a typical peak envelope power load of 300 W at 860 MHz with a drain efficiency of 43% and a gain of 15 dB. For DVB performance at 858 MHz, it offers an average output power of 70 W with 30% drain efficiency. The transistor is designed for broadband operation and features internal input and output matching for high gain and optimal performance. Its advanced flange material ensures optimum thermal behavior and reliability.
The BLF872 is housed in a flanged LDMOST ceramic package (SOT800-1) with two mounting holes and four leads. This package type is designed for surface mounting.
Applications include communication transmitter systems and industrial systems operating within the UHF band.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
32V.
SOT800-1 flanged LDMOST ceramic package with two mounting holes and four leads.
470 MHz to 860 MHz.
300W at 860 MHz with VDS=32V and IDq=2×0.9A.
15dB at 860 MHz with VDS=32V and IDq=2×0.9A.
43% at 860 MHz for PEP operation and 30% at 858 MHz for average power.