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80 pcs
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80 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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The BLF861A from NXP Semiconductors is a high-performance Silicon Nchannel enhancement mode lateral DMOS push-pull transistor. Engineered for demanding RF applications, this component boasts a robust 65V Drain-Source Voltage and a significant 18A Current Rating, making it suitable for power amplification tasks.
Key electrical specifications include a maximum power dissipation of 318W and a frequency rating of 860MHz. The transistor operates within a wide temperature range, from -65°C to 200°C, ensuring reliability in various environmental conditions. Its mechanical design features a screw mount type for secure installation.
This transistor is characterized by its low Drain-Source Resistance of 160mΩ at a Test Current of 1A. The BLF861A is a critical component for engineers designing advanced RF systems requiring stable and efficient power handling.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum operating temperature for the BLF861A is 200°C.
The minimum operating temperature for the BLF861A is -65°C.
The drain-source voltage of the BLF861A is 65V.
The current rating of the BLF861A is 18A.
The frequency of the BLF861A is 860MHz.
The BLF861A is mounted using a screw type.