DistyParts Icon
BLF7G22LS-200 The NXP Semiconductors BLF7G22LS-200 is an RF FET LDMOS transistor with a rated voltage of 65V and an output power of 55W. It operates in the 2.11GHz to 2.17GHz frequency range.
Mfr Part #:

BLF7G22LS-200

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors BLF7G22LS-200 is an RF FET LDMOS transistor with a rated voltage of 65V and an output power of 55W. It operates in the 2.11GHz to 2.17GHz frequency range.
✓ Total Stock: 250 pcs
$ Price Range: $0.99

BLF7G22LS-200 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
250 pcs
On Request
250 pcs On Request 1 On Request On Request 11+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BLF7G22LS-200 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free
SVHC Present
View Similar Products (0)

BLF7G22LS-200 Description

Short technical summary and product information.

The BLF7G22LS-200 from NXP Semiconductors is a high-performance RF FET LDMOS transistor designed for demanding RF applications. It features a rated voltage of 65V and a test voltage of 28V, with a test current of 1.62A.

 

This component offers a typical gain of 18.5dB and an output power of 55W, operating within the frequency range of 2.11GHz to 2.17GHz. The transistor type is LDMOS, making it suitable for power amplification stages.

 

Packaged in a SOT502B tube, the BLF7G22LS-200 is designed for surface mounting. Its robust specifications make it a reliable choice for various RF front-end applications requiring efficient power handling and amplification.

BLF7G22LS-200 Quick Information

Product Type: RF FET LDMOS
Series: BLF7G22LS
Canonical Name: BLF7G22LS-200 RF FET LDMOS
Subcategory: LDMOS

BLF7G22LS-200 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: No

BLF7G22LS-200 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BLF7G22LS-200 Features

  • 65V rated voltage for high power applications.
  • 55W maximum output power.
  • 18.5dB typical gain.
  • Operates from 2.11GHz to 2.17GHz.
  • LDMOS transistor in SOT502B package.

BLF7G22LS-200 Applications

  • Suitable for RF power amplifiers.
  • Used in high-frequency communication systems.
  • Ideal for base station infrastructure.
  • Designed for robust RF front-end stages.

BLF7G22LS-200 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the operating voltage of BLF7G22LS-200?

The rated voltage is 65V.

What package does BLF7G22LS-200 come in?

It comes in a SOT-502B package.

Is the BLF7G22LS-200 lead-free?

Yes, it is lead-free.

What is the typical gain of BLF7G22LS-200?

The typical gain is 18.5dB at 28V test.

What is the output power of BLF7G22LS-200?

The output power is 55W.

What frequency range does BLF7G22LS-200 operate in?

It operates from 2.11GHz to 2.17GHz.

BLF7G22LS-200 Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
View All Alternate Parts
BC847B/215
BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
View Part
ESD5371MXT5G
ESD5371MXT5G
On Semiconductor
The On Semiconductor ESD5371MXT5G is a Transistor Voltage Suppressor Diode. It features RoHS3 compliance and an MSL of 1.
View Part
BC847BS.115
BC847BS.115
NXP Semiconductors
The BC847BS.115 is a bipolar transistor array from NXP Semiconductors. It features RoHS3 compliance and an MSL of 1 Unlimited.
View Part
US1K
US1K
Toshiba
The US1K is an ultrafast recovery rectifier from Toshiba, designed for high-frequency rectification. It features a 800V reverse voltage rating and a 1A average forward current.
View Part
Home

Categories