Mfr Part #:

BLF7G22LS-130

The NXP Semiconductors BLF7G22LS-130 is an RF S BAND, N-CHANNEL transistor. It offers 23W of output power and operates within a frequency range of 2.11GHz to 2.17GHz.

✓ Total Stock: 217 pcs

$ Price Range: $0.99

BLF7G22LS-130 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	217 pcs On Request	217 pcs	On Request	1	On Request	On Request	1431+	On Request	On Request

BLF7G22LS-130 Specifications Quick View

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Category	New Products
Manufacturer Name	NXP Semiconductors

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BLF7G22LS-130 Description

Short technical summary and product information.

The BLF7G22LS-130 from NXP Semiconductors is an RF transistor designed for S-band applications. This N-channel device utilizes LDMOS technology and is rated for a voltage of 65V, with a test voltage of 28V. It delivers an output power of 23W and operates within the frequency range of 2.11GHz to 2.17GHz, featuring a gain of 13.5dB.

The transistor is specified with a test current of 1.05A. It is packaged in a NI-780S case and designed for chassis mounting. The component is supplied in bulk packaging.

This RF transistor is suitable for applications requiring high-frequency power amplification within the specified S-band range. Its specifications make it a component for various communication and radar systems.

BLF7G22LS-130 Quick Information

Product Type: RF Transistor

Series: BLF7G22LS

Canonical Name: BLF7G22LS-130 RF S BAND, N-CHANNEL Transistor

Subcategory: FETs, MOSFETs - RF

BLF7G22LS-130 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

BLF7G22LS-130 Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BLF7G22LS-130 Features

N-channel RF transistor with LDMOS technology.
23W output power capability.
Operates from 2.11GHz to 2.17GHz.
65V rated voltage.
Chassis mountable in NI-780S package.

BLF7G22LS-130 Applications

Used in S-band RF power amplifiers
Suitable for 2.11-2.17 GHz base stations
Ideal for 23W LDMOS transmitter stages
Designed for 28V test voltage applications
Used in N-channel RF power circuits

BLF7G22LS-130 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the operating frequency range of the BLF7G22LS-130?

2.11 GHz to 2.17 GHz.

What output power can the BLF7G22LS-130 deliver?

23 W.

What is the gain of this transistor?

13.5 dB.

What technology is used in the BLF7G22LS-130?

LDMOS.

What is the test current for the BLF7G22LS-130?

1.05 A.

What is the mounting type?

Chassis Mount.

What is the package type?

NI-780S.