| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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110 pcs
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110 pcs | On Request | 1 | On Request | On Request | 1314+ | On Request | On Request |
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The NXP Semiconductors BLF7G22LS-100P is an N-Channel RF Power MOSFET belonging to the Transistors - FETs, MOSFETs - RF category. This component operates with a maximum drain-source voltage of 65V and is designed for pulsed CW mode of operation.
Key electrical specifications include a minimum frequency of 600 MHz and a maximum frequency of 960 MHz. It exhibits a typical forward transconductance of 6 S and a typical drain efficiency of 59.7%. The MOSFET has an input capacitance of 79 pF and an output capacitance of 32 pF, both measured at 28V.
Packaged in an HSOP-F surface mount case, the BLF7G22LS-100P is suitable for various RF applications. The operating temperature range is from -65C to 225C. This component is not radiation-hardened.
This MOSFET is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1. REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BLF7G22LS-100P operates from 600 MHz to 960 MHz.
The maximum drain-source voltage is 65 V.
It is available in an HSOP-F surface mount package.
The operating temperature range is -65°C to 225°C.
It is an N-Channel enhancement mode MOSFET.
The typical drain efficiency is 59.7%.