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328 pcs
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328 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BLF7G20LS-200,112 from Ampleon USA Inc. is a high-performance RF FET LDMOS transistor designed for demanding applications. This component operates within a frequency range of 1.81GHz to 1.88GHz, delivering a significant output power of 55W.
Key electrical characteristics include a rated voltage of 65V and a test voltage of 28V, with a test current of 1.62A. The transistor provides a gain of 18dB, making it suitable for amplification stages in RF systems. It is housed in a SOT502B package, facilitating integration into various circuit designs.
This device is RoHS compliant and has a Moisture Sensitivity Level (MSL) of 1, indicating it is suitable for standard handling procedures. The BLF7G20LS-200,112 is an ideal choice for engineers seeking reliable RF power amplification solutions.
It is supplied in a Tray package. The manufacturer, Ampleon USA Inc., is known for its expertise in RF power transistors.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The rated voltage for the BLF7G20LS-200,112 is 65V.
The BLF7G20LS-200,112 transistor has an output power of 55W.
The BLF7G20LS-200,112 operates in the frequency range of 1.81GHz to 1.88GHz.
The gain of the BLF7G20LS-200,112 is 18dB.
The BLF7G20LS-200,112 is supplied in the SOT502B package, in Tray form.