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BLF7G20L-250P The NXP Semiconductors BLF7G20L-250P is an RF Power MOSFET with a breakdown voltage of 65V and operates in the L-band. It features a ceramic package and flange mount.
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BLF7G20L-250P

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors BLF7G20L-250P is an RF Power MOSFET with a breakdown voltage of 65V and operates in the L-band. It features a ceramic package and flange mount.
✓ Total Stock: 3 pcs
$ Price Range: $8.20

BLF7G20L-250P Available from 1 distributor

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BLF7G20L-250P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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BLF7G20L-250P Description

Short technical summary and product information.

The NXP Semiconductors BLF7G20L-250P is a high-performance RF Power MOSFET designed for amplifier applications. It operates in the L-band frequency range and offers a minimum breakdown voltage of 65V.

 

This MOSFET utilizes Metal-Oxide Semiconductor (MOS) FET technology and N-channel enhancement mode operation. It is constructed with silicon as the element material and features a common source configuration with two elements.

 

The component is housed in a ROHS compliant ceramic package with a flange mount style. It has 4 terminals and a flat terminal form, suitable for surface mounting.

 

Key specifications include a breakdown voltage of 65V, L-band frequency operation, and it is classified as an RF Power MOSFET. The device is also noted as being Lead Free.

BLF7G20L-250P Quick Information

Product Type: RF Power MOSFET
Canonical Name: NXP Semiconductors BLF7G20L-250P RF Power MOSFET
Subcategory: RF Power MOSFET

BLF7G20L-250P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BLF7G20L-250P Estimated Pricing

Qty Low High
1+ $8.20 $8.20

Estimated market price range - modelled values for guidance only, not live distributor offers.

BLF7G20L-250P Features

  • N-channel RF Power MOSFET
  • 65V minimum breakdown voltage
  • L-band frequency operation
  • Ceramic package, flange mount
  • Common source, 2 elements configuration

BLF7G20L-250P Applications

  • Suitable for RF power amplifier circuits.
  • Used in high-frequency RF transmission systems.
  • Ideal for N-CHANNEL enhancement mode applications.
  • Applicable in ceramic package RF transistors.
  • Designed for flange-mounted RF power devices.

BLF7G20L-250P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the BLF7G20L-250P?

The minimum breakdown voltage is 65V.

What frequency band does the BLF7G20L-250P operate in?

It operates in the L BAND.

What type of transistor is the BLF7G20L-250P?

It is an RF POWER MOSFET.

What is the FET technology used in this MOSFET?

The FET technology is METAL-OXIDE SEMICONDUCTOR.

What is the element material of the transistor?

The transistor element material is SILICON.

What is the channel type of the BLF7G20L-250P?

The channel type is N-CHANNEL.

What is the operating mode of this MOSFET?

The operating mode is ENHANCEMENT.

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