| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,117 pcs
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1117 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Ampleon BLF6G21-10G is a 10 W LDMOS power transistor suitable for base station applications operating from HF to 2200 MHz. It offers features such as integrated ESD protection and excellent ruggedness.
Typical performance in 1-carrier W-CDMA mode at 2110-2170 MHz, 28 V supply, and 100 mA IDq includes an average output power of 2 W, a gain of 19.3 dB, and an efficiency of 31%. In 2-carrier W-CDMA mode under the same conditions, it provides 0.7 W average output power, 18.5 dB gain, and 15% efficiency.
This transistor is compliant with Directive 2002/95/EC regarding Restriction of Hazardous Substances (RoHS). It is supplied in a ceramic surface-mounted package (SOT538A) with 2 leads.
Applications include RF power amplifiers for GSM, PHS, EDGE, CDMA, and W-CDMA base stations, as well as multi-carrier applications within the HF to 2200 MHz frequency range, and broadcast drivers.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical output power in 1-carrier W-CDMA mode at 2110-2170 MHz, 28 V, and 100 mA IDq is 2 W.
The typical gain in 1-carrier W-CDMA mode at 2110-2170 MHz, 28 V, and 100 mA IDq is 19.3 dB.
The typical efficiency in 1-carrier W-CDMA mode at 2110-2170 MHz, 28 V, and 100 mA IDq is 31 %.
The transistor operates from HF to 2200 MHz.
The BLF6G21-10G is supplied in a SOT538A ceramic surface-mounted package with 2 leads.