BLF6G20S-45112

The BLF6G20S-45112 is a 45W LDMOS RF power transistor manufactured by NXP Semiconductors. It is designed for base station applications operating in the 1800 MHz to 2000 MHz frequency range. The device is housed in a ceramic earless flanged package (SOT608B) with two leads and flange mount.\n\nKey electrical specifications include a typical supply voltage of 28 V, a maximum drain-source voltage of 65 V, and a maximum drain current of 13 A. Under typical 2-carrier W-CDMA test conditions (1805-1880 MHz, 28 V, 360 mA quiescent current), the transistor delivers an average output power of 2.5 W with a power gain of 19.2 dB and a drain efficiency of 14%. The adjacent channel power ratio (ACPR) is typically -50 dBc.\n\nThe transistor features integrated ESD protection and is internally matched for ease of use. It is designed for broadband operation and offers excellent ruggedness and thermal stability. The thermal resistance from junction to case is typically 1.7 K/W, and the maximum junction temperature is 225 °C.\n\nThe device is RoHS3 compliant and is suitable for RF power amplifiers in W-CDMA base stations and multi-carrier applications. The storage temperature range is -65 °C to +150 °C.