| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,100 pcs
|
1100 pcs | On Request | 1 | On Request | On Request | 0731+ | On Request | On Request |
| Category | |
| Manufacturer Name |
The NXP Semiconductors BLF6G20LS-75 is a robust RF MOSFET suitable for various high-frequency applications. This component operates within a frequency range of 1.93GHz to 1.99GHz, offering a gain of 19 dB and an output power of 25W.
Key electrical characteristics include a breakdown voltage of 65V, a current rating of 29A, and a test current of 900mA. The drain-to-source on-resistance is 160 mΩ, with a threshold voltage of 2V. The device is designed to operate in a wide temperature range, from -65°C to 150°C.
Packaged in a surface-mount SOT-502B case, the BLF6G20LS-75 is compatible with standard surface-mount assembly processes. Its RoHS 3 compliant status and lead-free composition indicate adherence to environmental regulations.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage (drain to source) for the BLF6G20LS-75 is 65V.
The maximum operating temperature for the BLF6G20LS-75 is 150°C.
The current rating for the BLF6G20LS-75 is 29A.
The BLF6G20LS-75 is available in a SOT-502B surface mount package.
The BLF6G20LS-75 is RoHS 3 Compliant.