| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
499 pcs
|
499 pcs | On Request | 1 | On Request | On Request | 1446+ | On Request | On Request |
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| Voltage |
The BLF6G20LS-140,118 from NXP Semiconductors is a high-power RF FET LDMOS transistor designed for demanding applications. It features a rated voltage of 65V and provides a significant output power of 35.5W.
With a gain of 16.5dB and operating frequency range of 1.93GHz to 1.99GHz, this component is suitable for various RF power amplification tasks. The device is specified with a test voltage of 28V and a test current of 1A, with a current rating of 39A for the amplifier.
Packaged in a SOT502B case, the BLF6G20LS-140,118 is designed for chassis mounting. Its LDMOS technology ensures efficient performance in its intended frequency band.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The test voltage is 28V and the nominal rated voltage is 65V.
1.93 GHz to 1.99 GHz.
35.5W.
16.5 dB.
SOT502B with chassis mount.
LDMOS.
The amplifier current rating is 39A with a test current of 1A.