| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
70 pcs
|
70 pcs | On Request | 1 | On Request | On Request | 1307+ | On Request | On Request |
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The BLF6G20-180PN112 is a 180W Power LDMOS transistor designed for RF power amplifier applications in W-CDMA base stations and multicarrier systems. It operates across the 1800MHz to 2000MHz frequency band.
Key electrical performance at 32V supply: 50W average output power, 18dB power gain, 29.5% efficiency, and ACPR of -35dBc under 2-carrier W-CDMA test conditions. The device features integrated ESD protection, excellent ruggedness, and is internally matched for ease of use.
Packaged in a flanged balanced LDMOST ceramic package (SOT539A) with 4 leads and flange mounting. RoHS compliant and rated for junction temperatures up to 225°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $106.33 | $106.33 |
| 4+ | $86.29 | $86.29 |
| 8+ | $85.19 | $85.19 |
| 12+ | $83.09 | $83.09 |
| 20+ | $80.99 | $80.99 |
| 40+ | $79.09 | $79.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1800 MHz to 2000 MHz (broadband operation).
50W average output power (under 2-carrier W-CDMA, 32V VDS).
Typical power gain 18dB, typical efficiency 29.5%.
Flanged balanced LDMOST ceramic package, SOT539A, with 4 leads and flange mounting.
Yes, compliant with Directive 2002/95/EC (RoHS).
225°C.