| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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56 pcs
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56 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BLF6G13LS-250PGJ is an RF Power Transistor manufactured by Flip Electronics Manufacturing Services. This LDMOS transistor is designed for high-frequency applications, delivering 250W of power at 1.3GHz with a gain of 17 dB and a voltage rating of 50V.
It features N-channel technology and is housed in a SOT1121E package, suitable for surface mount applications. The transistor is specified with a Moisture Sensitivity Level (MSL) of 1, indicating unlimited usability under standard conditions.
This component is part of the RF MOSFET Transistor category, suitable for various wireless and RF semiconductor applications. Its robust design and specifications make it a reliable choice for power amplification tasks in demanding RF systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BLF6G13LS-250PGJ offers 250W of power.
This RF transistor operates at 1.3 GHz.
The BLF6G13LS-250PGJ has a voltage rating of 50V.
The BLF6G13LS-250PGJ is supplied in the SOT1121E package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.