| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name |
The BLF6G10S-45 from NXP Semiconductors is an RF Power LDMOS Transistor. It features a Drain-Source Voltage rating of 65V.
This transistor is engineered to withstand a load mismatch corresponding to a VSWR of 10:1 through all phases. This capability is specified under operating conditions of VDS = 28 V, IDq = 350 mA, PL = 35 W (CW), and a frequency of 960 MHz.
As an RF power transistor, the BLF6G10S-45 is suitable for applications requiring robust performance in demanding RF environments. Its ability to handle load mismatches makes it a reliable component for power amplifier designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Voltage is 65V.
The BLF6G10S-45 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under specified conditions.
The load mismatch specification is valid under VDS = 28 V; IDq = 350 mA; PL = 35 W (CW); f = 960 MHz.