BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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11 pcs
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11 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| SVHC Present |
The NXP BLF6G10LS-200RN is a Silicon, N-Channel RF Power MOSFET designed for amplifier applications. It features a minimum breakdown voltage of 65V and a maximum drain current of 49A. This device operates within the Ultra High Frequency band and utilizes Metal-Oxide Semiconductor FET technology.
The MOSFET is housed in a ceramic, metal-sealed cofired flatpack package suitable for surface mounting. It has a single element configuration with two terminals and operates in enhancement mode. The transistor element material is silicon, and it is classified as an RF Power transistor.
This component is RoHS3 compliant and Lead Free. It is also compliant with China RoHS regulations. The Moisture Sensitivity Level (MSL) is 1, indicating unlimited usability under standard conditions. The REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage is 65 V.
The maximum drain current (ID) is 49 A.
It operates in the ULTRA HIGH FREQUENCY BAND.
It is an RF POWER MOSFET.
The FET technology is METAL-OXIDE SEMICONDUCTOR.
The package body material is CERAMIC, METAL-SEALED COFIRED.
Yes, it is RoHS3 Compliant.
