Mfr Part #:

BLF6G10LS-200RN

The NXP Semiconductors BLF6G10LS-200RN is an RF Power MOSFET designed for high-frequency applications. It features a 65V minimum breakdown voltage and a maximum drain current of 49A.

✓ Total Stock: 369 pcs

$ Price Range: $0.99

BLF6G10LS-200RN Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	369 pcs On Request	369 pcs	On Request	1	On Request	On Request	1430+	On Request	On Request
HK XINYUANXIN ELECTRONIC TECH LIMITED ✓ Non-Authorised Inventory information	On Request On Request	On Request	On Request	1	On Request	On Request	On Request	On Request	On Request

BLF6G10LS-200RN Specifications Quick View

Most important parameters for selection – full specs in datasheet.

SELECT ALL

Category	New Products
Manufacturer Name	NXP Semiconductors

View Similar Products (0)

BLF6G10LS-200RN Description

Short technical summary and product information.

This NXP Semiconductors BLF6G10LS-200RN is an RF Power MOSFET utilizing Metal-Oxide Semiconductor technology. It is constructed with a silicon N-channel enhancement mode transistor element.

The device offers a minimum breakdown voltage of 65V and can handle a maximum drain current (ID) of 49A. It operates within the Ultra High Frequency band, making it suitable for demanding RF applications.

The MOSFET is surface-mounted and comes in a rectangular, flatpack ceramic package, sealed with metal. It has two terminals and is configured as a single element device.

Compliance information indicates RoHS3 compliance and a Moisture Sensitivity Level (MSL) of 1 Unlimited. It is also designated as Lead Free and REACH Unaffected.

BLF6G10LS-200RN Quick Information

Product Type: RF Power MOSFET

Series: BLF6G10LS

Canonical Name: NXP Semiconductors BLF6G10LS-200RN RF Power MOSFET

Subcategory: RF Power MOSFET

BLF6G10LS-200RN Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

BLF6G10LS-200RN Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BLF6G10LS-200RN Features

65V minimum breakdown voltage.
49A maximum drain current.
Operates in Ultra High Frequency band.
N-Channel enhancement mode MOSFET.
Surface mount ceramic flatpack.

BLF6G10LS-200RN Applications

Suitable for RF amplifier applications.
Designed for high-frequency circuits.
Used in UHF band systems.

BLF6G10LS-200RN FAQs

12 frequently asked questions generated from this part’s specifications.

What is the breakdown voltage of the BLF6G10LS-200RN?

The minimum breakdown voltage is 65V.

What is the maximum drain current for this MOSFET?

The maximum drain current (ID) is 49A.

What frequency band does the BLF6G10LS-200RN operate in?

It operates in the ULTRA HIGH FREQUENCY BAND.

What type of transistor is the BLF6G10LS-200RN?

It is an RF POWER MOSFET.

What is the FET technology used in this part?

The FET technology is METAL-OXIDE SEMICONDUCTOR.

What is the element material of the transistor?

The transistor element material is SILICON.

What is the channel type of this MOSFET?

The channel type is N-CHANNEL.

What is the operating mode of the BLF6G10LS-200RN?

The operating mode is ENHANCEMENT.

How many terminals does this component have?

It has 2 terminals.

Is this part RoHS compliant?

This part is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this component?

The MSL is 1 Unlimited.

Is this part Lead Free?

Yes, this part is Lead Free.